2007-09-01 rev.2.2 page 1 idb06e60 fast switching emcon diode product summary v rrm 600 v i f 6 a v f 1.5 v t j max 175 c feature ? 600 v emcon technology ? fast recovery ? soft switching ? low reverse recovery charge ? low forward voltage ? 175c operating temperature ? easy paralleling pg-to263-3-2 pin 1 pin 2 pin 3 nc c a marking d06e60 type package ordering code idb06e60 pg-to263-3-2 - maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm 600 v continous forward current t c =25c t c =90c i f 14.7 10 a surge non repetitive forward current t c =25c, t p =10 ms, sine halfwave i fsm 29 maximum repetitive forward current t c =25c, t p limited by t jmax , d =0.5 i frm 22 power dissipation t c =25c t c =90c p tot 46.9 26.6 w operating and storage temperature t j , t st g -55...+175 c soldering temperature reflow soldering, msl1 t s 245 c
2007-09-01 rev.2.2 page 2 idb06e60 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 3.2 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - 35 62 - electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics reverse leakage current v r =600v, t j =25c v r =600v, t j =150c i r - - - - 50 500 a forward voltage drop i f =6a, t j =25c i f =6a, t j =150c v f - - 1.5 1.5 2 - v 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2007-09-01 rev.2.2 page 3 idb06e60 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics reverse recovery time v r =400v, i f =6a, d i/dt =550a/s, t j =25c v r =400v, i f =6a, d i/dt =550a/s , t j =125c v r =400v, i f =6a, d i/dt =550a/s , t j =150c t rr - - - 70 100 105 - - - ns peak reverse current v r =400v, i f =6a, d i/dt =550a/s, t j =25c v r =400v, i f =6a, d i/dt =550a/s, t j =125c v r =400v, i f =6a, d i/dt =550a/s, t j =150c i rrm - - - 6.5 7.4 7.9 - - - a reverse recovery charge v r =400v, i f =6a, d i/dt =550a/s, t j =25c v r =400v, i f =6a, d i/dt =550a/s, t j =125c v r =400v, i f =6a, d i/dt =550a/s, t j =150c q rr - - - 240 360 400 - - - nc reverse recovery softness factor v r =400v, i f =6a, d i f /dt =550a/s, t j =25c v r =400v, i f =6a, d i f /dt =550a/s, t j =125c v r =400v, i f =6a, d i f /dt =550a/s, t j =150c s - - - 4 4.8 4.9 - - -
2007-09-01 rev.2.2 page 4 idb06e60 2 diode forward current i f = f( t c ) parameter: t j 175c 25 50 75 100 125 c 175 t c 0 2 4 6 8 10 12 a 16 i f 1 power dissipation p tot = f ( t c ) parameter: t j 175 c 25 50 75 100 125 c 175 t c 0 5 10 15 20 25 30 35 40 w 50 p tot 3 typ. diode forward current i f = f ( v f ) 0 0.5 1 1.5 v 2.5 v f 0 2 4 6 8 10 12 14 a 18 i f -55c 25c 100c 150c 4 typ. diode forward voltage v f = f ( t j ) -60 -20 20 60 100 c 160 t j 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 v 2 v f 3a 6a 12a
2007-09-01 rev.2.2 page 5 idb06e60 5 typ. reverse recovery time t rr = f (d i f /d t ) parameter: v r = 400v, t j = 125c 200 300 400 500 600 a/s 800 d i f /d t 0 50 100 150 200 ns 300 t rr 12a 6a 3a 6 typ. reverse recovery charge q rr = f (d i f /d t ) parameter: v r = 400v, t j = 125 c 200 300 400 500 600 a/s 800 d i f /d t 250 275 300 325 350 375 400 425 450 475 500 nc 550 q rr 3a 6a 12a 7 typ. reverse recovery current i rr = f (d i f /d t ) parameter: v r = 400v, t j = 125c 200 300 400 500 600 a/s 800 d i f /d t 3 4 5 6 7 8 9 a 11 i rr 12a 6a 3a 8 typ. reverse recovery softness factor s = f(d i f /d t ) parameter: v r = 400v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 0 1 2 3 4 5 6 7 8 9 11 s 12a 6a 3a
2007-09-01 rev.2.2 page 6 idb06e60 9 max. transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w idp06e60 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2007-09-01 rev.2.2 page 7 idb06e60
2007-09-01 rev.2.2 page 8 idb06e60 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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